Mr. John chang
Model No.: YZPST-BTA60
Brand: YZPST
Place Of Origin: China
Tj: -40~125℃
IT(RMS): 60A
VDRM: 1200V
VRRM: 1600V
VTM: 1.55V
Tstg: -40 ~150℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 10000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
BTA60 Series 60A TRIACs
DESCRIPTION:
The BTA60 triac series is suitable to fit all models of control Found in applications such as motor control ,industrial and domestic lighting ,heating and static switching , motor speed controllers,…Thanks to their clip assembly technique, theyprovide a superior performance in surge currenthandling capabilities
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at2500VRMS) complying with UL standards
| Symbol | Value | Unit |
| IT(RMS) | 60 | A |
| VDRM VRRM | 1200/1600 | V |
| VTM | 1.55 | V |
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (T =25℃) | VDRM | 1200/1600 | V |
| Repetitive peak reverse voltage (T =25℃) | VRRM | 1200/1600 | V |
| RMS on-state current | IT(RMS) | 60 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
500 |
A |
| I2t value for fusing (tp=10ms) | I2t | 1250 | A2S |
| Critical rate of rise of on-state current (I =2×IGT) | dI/dt | 50 | A/μS |
| Peak gate current | IGM | 8 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
3 Quadrants
|
Symbol |
Test Condition |
Quadrant |
|
Value |
Unit |
|
IGT |
V =12V R =33Ω |
Ⅰ Ⅱ Ⅲ |
MAX. |
50 |
mA |
| VGT | Ⅰ-Ⅱ-Ⅲ | MAX. | 1.3 | V | |
| VGD | VD=VDRM Tj=125℃ R=3.3KΩ | Ⅰ-Ⅱ-Ⅲ |
MIN. | 0.2 | V |
| IL | IG=1.2IGT | Ⅰ-Ⅲ |
MAX. | 80 | mA |
| II | 180 | ||||
| IH | IT=100mA | MAX. | 80 | mA | |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | V/μs | |
STATIC CHARACTERISTICS
| Symbol | Parameter | Value(MAX.) | Unit | |
| VTM | ITM =80A tp=380μs | Tj =25℃ | 1.65 | V |
| IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 10 | μA |
| IRRM | Tj =125℃ | 5 | mA | |
Thermal Resistances
| Symbol | Parameter | Value | Unit |
| Rth(j-a) | junction to ambient | 50 |
℃/W |
| Rth(j-c) | Junction to case(AC) | 0.8 |
Ordering Information Scheme
TO-3P Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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