Mr. John chang
Model No.: YZPST-BTA12-600C
Brand: YZPST
Place Of Origin: China
IT (RMS): 12A
VDRM / VRRM: 600V
VTM: 1.55V
ITSM: 155A
I2t: 70A2S
DI/dt: 50A/ μs
IGM: 4A
PG(AV): 1W
Tstg: -40--+150℃
Tj: -40--+125℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
TO-220A
Main Feature (Tj=25℃)
| Symbol | Value | Unit |
| IT (RMS) | 12 | A |
| VDRM / VRRM | 600/800 | V |
| VTM | 1.55 | V |
Absolute ratings (Limiting Values)
| Symbol | Parameter | Value | Unit |
| ITSM | Non repetitive surge peak on-state Current (tp=10ms) | 115 | A |
| I2t | (tp=10ms) | 70 | A2S |
| dI/dt | IG=2IGT ，tr≤100ns,Tj=125℃ | 50 | A/ μs |
| IGM | Peak gate current(tp=20us) | 4 | A |
| PG(AV) | Average gate power | 1 | W |
| Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+125 | ℃ |
Thermai Resistances
Symbol Parameter Value Unit TO-220A 2.3 Rth (j-c) Junction to case TO-220B/TO-220C 1.4 ℃/W TO-220F 3.9
Electrical characteristics (Tj=25℃ unless otherwise stated)
Symbol Test Conditions Value Unit TW SW CW BW C B IGT VD=12V, RL=30Ω ⅠⅡⅢ ≤5 ≤10 ≤25 ≤50 ≤25 ≤50 mA Ⅳ ---- ---- ---- ---- ≤50 ≤100 IDRM VD=VDRM Tj=25℃ ≤5 μA Tj=125℃ ≤1 mA IRRM VD=VRRM Tj=25℃ ≤5 μA Tj=125℃ ≤1 mA ⅠⅢ ≤10 ≤25 ≤50 ≤70 ≤40 ≤50 IL IG=1.2IGT Ⅳ ---- ---- ---- ---- ≤40 ≤50 mA Ⅱ ≤15 ≤30 ≤60 ≤80 ≤80 ≤100 VGT VD=12V ,RL=30Ω ≤1.3 V VGD VD=VDRM, Tj=125℃RL=3.3KΩ ≥0.2 V VTM ITM=17A,tp=380 μs 1.55 V IH VD=12V ，IT=200mA ≤20 ≤25 ≤35 ≤50 ≤25 ≤50 mA dV/dt VD=67%VDRM, ≥40 ≥ ≥ ≥ 1000 ≥ ≥400 v/ μs GateOpen, Tj=125℃ 100 400 200
Measure of package
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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