Mr. John chang
Model No.: YZPST-BT152X-800R
Brand: YZPST
Place Of Origin: China
IT (RMS): 20A
VRRM: 800V
IT(AV): 13A
ITSM: 200A
IGM: 4A
PGM: 5W
PG(AV): 1W
Tstg: -40--+150℃
Tj: -40--+125℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Air
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
BT152-600R/800R
The high ability of current shock resistance 800V BT152X-800R triac TO-220F
YZPST-BT152X-800R
●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main purposes
Alternating current switch,
AC DC power converter,
The control of electric heating
Motor speed control
● Package
TO-220M1 TO-220F
Main Feature (Tj=25℃)
| Symbol | Value | Unit |
| IT (RMS) | 20 | A |
| VDRM VRRM | 600/800 | V |
| IGT | ≤200 | uA |
Absolute ratings (Limiting Values)
| Symbol | Parameter | Value | Unit |
| IT (RMS) | RMS on-state current (180 °conduction angle) | 20 | A |
| IT(AV) | AV on-state current (180 °conduction angle) | 13 | A |
| ITSM | Non repetitive surge peak on-state | 200 | A |
| Current (tp=10ms) | |||
| IGM | Peak gate current(tp=20us) | 4 | A |
| PGM | Peak gate power | 5 | W |
| PG(AV) | Average gate power | 1 | W |
| Tstg | Storage temperature | 110 | ℃ |
| Tj | Operating junction temperature | 85 |
Thermai Resistances
| Symbol | Parameter | Value | Unit | |
| TO-220M1 | 2.2 | |||
| Rth (j-c) | Junction to case | TO-220F | 2.5 | ℃/W |
Electrical characteristics (Tj=25℃ unless otherwise stated)
| Symbol | Test Conditions | Value | Unit | |||
| Min | Type | Max | ||||
| IGT | VD=12V, RL=33Ω | ---- | 5 | 25 | mA | |
| VGT | VD=12V, RL=33Ω | ----- | ----- | 1.3 | V | |
| VGD | VD=VDRM, RL=3.3KΩ, RGK=1KΩ,Tj=125℃ | 0.2 | ----- | ----- | V | |
| IH | IT=500mA | ----- | ----- | 30 | mA | |
| IL | IG=1.2IGT | ----- | ----- | 60 | mA | |
| dV/dt | VD=67%VDRM, GateOpen, Tj=110℃ | 500 | v/ μs | |||
| ----- | ----- | |||||
| VTM | IT=30A,tp=380 μs | ----- | ----- | 1.6 | V | |
| dI/dt | IG=2IGT | 50 | ----- | ----- | A/μs | |
| I2T | Tp=10ms | ----- | ----- | 200 | A2S | |
| Tj=25℃ | ----- | ----- | 10 | μA | ||
| IDRM | VD=VDRM | Tj=125℃ | ----- | ----- | 1 | mA |
| Tj=25℃ | ----- | ----- | 10 | μA | ||
| IRRM | VR=VRRM | Tj=125℃ | ----- | ----- | 1 | mA |
Measure of package
((TO--220F))
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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