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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 16A 600V BTA316X-600C TO-220F triac
  • 16A 600V BTA316X-600C TO-220F triac
  • 16A 600V BTA316X-600C TO-220F triac
  • 16A 600V BTA316X-600C TO-220F triac
  • 16A 600V BTA316X-600C TO-220F triac
  • 16A 600V BTA316X-600C TO-220F triac

16A 600V BTA316X-600C TO-220F triac

  • $0.16
    4000-19999
    Piece/Pieces
  • $0.14
    ≥20000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA316X-600C

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM600V

ITSM160A

I2t140A2S

IGM4A

VGM16V

PGM40W

PG(AV)1W

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability10000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTA316X-600C

16A 600V BTA316X-600C TO-220F triac

Package
TO-220F

YZPST-BTA316-600B
Main    Feature(Tj=25℃)

Symbol Value Unit
IT(RMS) 16 A
VDRM   / VRRM 800 V
ITSM 160 A

Absolute ratings (Limiting Values)

Symbol Parameter Value Unit
IT (RMS) Rms on-state current(full sine wave) 16 A
Non- repetitive Peak on-state
ITSM Current (Tj=25,tp=20ms) 160 A
I2t I2   for fusing(tp=10ms) 140 A2S
IGM Peak gate current 4 A
VGM Peak gate voltage 16 V
PGM Peak gate power 40 W
PG(AV) Average gate power 1 W
dIT/dt Repetitive rate of rise of on-state current after triggering - 50
(IT=6A,IG =0.2A,dlG/dt=0.2A/us) 50 A/μs
Tstg Storage temperature 110
Tj Operating junction temperature 85

Thermai Resistances

Symbol Parameter Condition Type Unit
Rth j-c Thermal Resistance,Junction to case One cycle 220F 1.2 /W
Rth j-a Thermal Resisatance,Junction to ambient —— —— 60 /W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol Test Conditions Type Max Unit
BTA316-800 C B
VD=12V    IT=0.1A
T2+ G+ 11 16 25 mA
IGT T2+ G- 12 20 30 mA
T2- G- 18 25 50 mA
T2- G+ mA
IH VD=12V IGT=0.1A 25 50 mA
VTM IT=20A — 1.3 1.7 V
DRM DRM=520V 10 μA
IRRM VRRM=520V 15 μA
VD=12V    IT=0.1A
VGT Tj=125 —— 1.65 V
VD=VDRMMAX
ID Tj=125 —— 0.5 mA

Measure of   package  TO-263 :

YZPST-BTA316-600B TO-220F

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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