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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current
  • 600V BT139-600E 16A Triac with low holding and latching current

600V BT139-600E 16A Triac with low holding and latching current

  • $0.16
    3000-9999
    Piece/Pieces
  • $0.13
    ≥10000
    Piece/Pieces
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  • Product Description
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Product Attributes

Model No.YZPST-BT139-600E

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM/VRRM600/800V

VTM≤1.6V

Tstg-40~150℃

Tj-40~125℃

ITSM140A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-BT139 Series 16A Triacs

YZPST-BT139-600E


DESCRIPTION:

With low holding and latching current, BT139 Series triacs are especially recommended for    use on middle and small resistance type power load.

YZPST-BT139-600E

MAIN FEATURES:

symbol

value

unit

IT(RMS)

16

A

VDRM/VRRM

600/800

V

VTM

≤1.6

V

ABSOLUTE MAXIMUM RATINGS:

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40~150
Operating junction temperature range Tj -40~125
Repetitive peak off-state voltage (Tj=25) VDRM 600/800 V
Repetitive peak reverse voltage (Tj=25) VRRM 600/800 V
RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current
(full cycle, F=50Hz) ITSM 140 A
I2t value for fusing (tp=10ms) I2t 98 A2s
Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A

Average gate power dissipation

PG(AV)

0.5

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter Value
Test Condition Quadrant D E F Unit
Ⅰ- Ⅱ-Ⅲ 5 10 25
IGT 10 25 70 mA
VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 10 20 40 mA
Ⅰ-Ⅲ-Ⅳ 15 30 50
IL IG=1.2IGT MAX 20 40 70 mA
VD=0.66×VDRM   Tj=125 Gate open
dV/dt MIN 20 50 100 V/ µs

THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-220C 1.3
Rth(j-c) junction to case(AC) TO-220A(Ins) 2 /W

PACKAGE MECHANICAL DATA

TO-220C

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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