Mr. John chang
Model No.: YZPST-BTA212X-600D
Brand: YZPST
Place Of Origin: China
IT(RMS): 12A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 120A
I2t: 78A2s
DI/dt: 50A/ μs
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Air,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
BTA212 12A Triacs
YZPST-BTA212X-600D
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 12 | A |
| VDRM/VRRM | 600/800/1200 | V |
| VTM | ≤1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600/800/1200 | V |
| Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600/800/1200 | V |
| RMS on-state current | IT(RMS) | 12 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
| I2t value for fusing (tp=10ms) | I2t | 78 | A2s |
| Critical rate of rise of on-state current(IG=2 × IGT) | dI/dt | 50 | A/ μs |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
3 Quadrants：
| Parameter | Value | |||||||
| Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
| IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
| IH | IT=100mA | MAX | 5 | 10 | 40 | 60 | mA | |
| Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 80 | mA |
| VD=2/3VDRM Tj=125℃ Gate open | ||||||||
| dV/dt | MIN | 100 | 200 | 500 | 1000 | V/ µs | ||
4 Quadrants：
| Parameter | Value | |||||
| Test Condition | Quadrant | C | B | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
| IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
| VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
| VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
| IH | IT=100mA | MAX | 40 | 60 | mA | |
| Ⅰ-Ⅲ- Ⅳ | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | mA |
| VD=2/3VDRM Tj=125℃ Gate open | ||||||
| dV/dt | MIN | 200 | 500 | V/ µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=17A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
| IDRM | Tj=25℃ | 5 | µA | ||
| IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| TO-220A(Ins） | 2.3 | |||
| TO-220B(Non-Ins） | 1.5 | |||
| TO-220F(Ins） | 2.5 | ℃/W | ||
| Rth(j-c) | junction to case(AC) | TO-263 | 1.5 | |
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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