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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High current density 16A BT139B-600D Triac
  • High current density 16A BT139B-600D Triac
  • High current density 16A BT139B-600D Triac
  • High current density 16A BT139B-600D Triac
  • High current density 16A BT139B-600D Triac
  • High current density 16A BT139B-600D Triac

High current density 16A BT139B-600D Triac

  • $0.25
    2000-9999
    Piece/Pieces
  • $0.15
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BT139B-600D

BrandYZPST

Place Of OriginChina

VRRM600V

IT(RMS16A

ITSM140A

I2t98A2S

IGM2A

PG(AV)0.5W

PGM5W

VDRM600V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-BT139 Series  16A TRIAC

High current density 16A BT139B-600D Triac

Description:
High current density due to mesa technology;Glass Passivation.
Applications
BT139 series triacs is suitable for general purpose AC switching.
They can be used as an ON/OFF Function in applications such
as static relays,heating regulation,induction motor stating circuits...
or for phase contol operation light dimmers,motor speed controllers.
Features:
Blocking voltage to 600 & 800V
On-state RMS current to 16A
Non-repetitive peak on-state current to 140A

YZPST-BT139B-600D TRIAC
Absolute Maximum Ratings

Symbol Parameter Conditions Value Unit
VDRM Repetitive peak off-state voltage     TJ=25℃ 600 & 800      V
VRRM Repetitive peak Reverse voltage TJ=25    600 & 800 V
IT(RMS) RMS on-state current (full sine wave) Tc=99    16 A
Non-repetitive surge peak On-state current (full cycle,Tj=25  tp=20ms 140 A
ITSM A
I2t I2t Value for fusing tp=10ms 98 A2S
IGM Peak gate current 2 A
PG(AV) Average gate power dissipation tp=20µs, TJ=125    0.5 W
PGM Peak gate power dissipation tp=10ms, TJ=125    5 W
TSTG Storage temperature -40               150   
TJ Junction temperature -40               125   


Electrical Characteristics

Symbol Parameter Numerical Unit
VTM IT=15A,tp=380µs    TJ=25 ℃  1.65 V
IDRM VD=VDRM,VR=VRRM TJ=25  5 µA
IRRM VD=VDRM,VR=VRRM TJ=125  1 mA

Package Outline Dimensions

TO-263

TO-263


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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