Mr. John chang
Model No.: YZPST-BTA216X-600B
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
I2t: 98A2S
Di/dt: 100A/μs
IGM: 2A
VGM: 5W
PGM: 5W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
controllers.
MAIN FEATURES
| Symbol | Value | Unit |
| IT(RMS) | 16 | A |
| VDRM/VRRM | 600 | V |
| IGT | ≤10 | mA |
ABSOLUTE MAX I MUM RATINGS
| Symbol | PARAMETER | Value | Unit | |
| IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤99℃ | 16 | A |
| Non repetitive surge peak on-state current | t=20ms | 140 | ||
| ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
| I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
| di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
| IGM | Peak gate current, | — | 2 | A |
| VGM | Peak gate voltage | — | 5 | W |
| PGM | Peak gate power | — | 5 | W |
| PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
| Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
| Tj | Operating junction temperature range | 125 | ℃ | |
ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)
STATIC CHARACTERISTICS
| Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
| MIN | TYPE | MAX | |||||
| IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
| VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
| VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
| VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
| IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
| Ⅰ-Ⅲ | - | - | 60 | mA | |||
| IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
| ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA | |
DYNAMIC CHARACTERISTICS
| Symbol | Parameter | Test Condition | Value | Unit | |
| MIN | TYPE | ||||
| dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
| exponential waveform; gate open circuit | |||||
| dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16A; without snubber; gate open circuit | 28 | A/ms | |
| T | Gate controlled turn-on time | ITM = 20 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
| tgt | |||||
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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