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600V SOT223 Z0109MN triac 1A on-state RMS curren

$21

10-99
Others
$18

≥100
Others

option:

Voltage (VDRM)：600V
Gate Sensitivity (IGT)：10mA
Package：SOT223
IT(RMS)：1A
2t：0.35A2s
Tstg：−40-+150℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-Z0109MN

Brand: YZPST

Place Of Origin: China

Part Number: Z0109MN

Voltage (VDRM): 600V

Gate Sensitivity (IGT): 10mA

Package: SOT223

IT(RMS): 1A

2t: 0.35A2s

Tstg: −40-+150℃

Tj: −40-+125℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: 1000pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N:YZPST-Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN

1. Product proﬁle

1.1 Description

Passivated triacs in conventional and surface mounting packages. Intended for use in applications requiring high bidirectional transient and blocking voltage capability.

Available in a range of gate current sensitivities for optimum performance.

Product availability:

Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.

1.2 Features

Blocking voltage to 800 V (NA and NN 1 A on-state RMS current. types)

1.3 Applications

Home appliances Small motor control

Fan controllers Small loads in industrial process control.

Pinning information

Table 1: Pinning - SOT54B (TO-92), SOT223, simpliﬁed outline and symbol

1 terminal 2 (T2)	SOT54B (TO-92)
2 gate (G)
3 terminal 1 (T1)
1 terminal 1 (T1) SOT223

2	terminal 2 (T2)
3	gate (G)

4 terminal 2 (T2)

3.1 Ordering options

Table 2: Ordering information

Part Number	Voltage (VDRM)	Gate Sensitivity (IGT)	Package
Z0103MA	600 V	3 mA	SOT54B (TO-92)
Z0103NA	800 V	3 mA	SOT54B (TO-92)
Z0107MA	600 V	5 mA	SOT54B (TO-92)
Z0107NA	800 V	5 mA	SOT54B (TO-92)
Z0109MA	600 V	10 mA	SOT54B (TO-92)
Z0109NA	800 V	10 mA	SOT54B (TO-92)
Z0103MN	600 V	3 mA	SOT223
Z0103NN	800 V	3 mA	SOT223
Z0107MN	600 V	5 mA	SOT223
Z0107NN	800 V	5 mA	SOT223
Z0109MN	600 V	10 mA	SOT223
Z0109NN	800 V	10 mA	SOT223

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
V DRM	repetitive peak off-state voltage	25 °C ≤ Tj ≤ 125 °C
	Z0103/07/09MA; Z0103/07/09MN		-	600	V
	Z0103/07/09NA; Z0103/07/09NN		-	800	V
VRRM	repetitive peak reverse voltage	25 °C ≤ Tj ≤ 125 °C
	Z0103/07/09MA; Z0103/07/09MN		-	600	V
	Z0103/07/09NA; Z0103/07/09NN		-	800	V
ITSM	non-repetitive peak on-state current	full sine wave; Tj = 25 °C prior to surge;
		Figure 2 and Figure 3
		t = 20 ms	-	8	A
		t = 16.7 ms	-	8.5	A
IT(RMS)	RMS on-state current	all conduction angles; Figure 4
	SOT223	Tsp = 90 °C	-	1	A
	SOT54B (TO-92)	T lead = 50 °C	-	1	A
I2t	I2t for fusing	t = 10 ms	-	0.35	A2s
dIT/dt	rate of rise of on-state current	ITM = 1.0 A; IG = 2 x I GT; dIG/dt = 100 mA/µs	-	20	A/µs
IGM	peak gate current	tp = 20 µs	-	1	A
PGM	peak gate power		-	2	W
PG(AV)	average gate power	over any 20 ms period	-	0.1	W
Tstg	storage temperature		−40	150	°C
Tj	junction temperature		−40	125	°C

Thermal characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-sp)	thermal resistance from junction to solder point for SOT223	Figure 5	-	-	25	K/W
Rth(j-lead)	thermal resistance from junction to lead for SOT54B (TO-92)	Figure 5	-	-	60	K/W
Rth(j-a)	thermal resistance from junction to ambient
	SOT223	minimum footprint; mounted on a PCB	-	60	-	K/W
	SOT54B (TO-92)	vertical in free air	-	150	-	K/W

Characteristics

Tj= 25 ℃ unless otherwise .

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static characteristics
I GT	gate trigger current	VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;
	Z0103MA/MN/NA/NN	Figure 9	-	-	3	mA
	Z0107MA/MN/NA/NN		-	-	5	mA
	Z0109MA/MN/NA/NN		-	-	10	mA
	Z0103MA/MN/NA/NN	VD = 12 V; RL = 30 Ω; T2− G+; Figure 9	-	-	5	mA
	Z0107MA/MN/NA/NN		-	-	7	mA
	Z0109MA/MN/NA/NN		-	-	10	mA
IL	latching current	VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;
	Z0103MA/MN/NA/NN	Figure 7	-	-	7	mA
	Z0107MA/MN/NA/NN		-	-	10	mA
	Z0109MA/MN/NA/NN		-	-	15	mA
	Z0103MA/MN/NA/NN	VD = 12 V; RL = 30 Ω; T2+ G− ; Figure 7	-	-	15	mA
	Z0107MA/MN/NA/NN		-	-	20	mA
	Z0109MA/MN/NA/NN		-	-	25	mA
IH	holding current	IT = 50 mA; Figure 8
	Z0103MA/MN/NA/NN		-	-	7	mA
	Z0107MA/MN/NA/NN		-	-	10	mA
	Z0109MA/MN/NA/NN		-	-	10	mA
VT	on-state voltage	Figure 6	-	1.3	1.6	V
VGT	gate trigger voltage	VD = 12 V; RL = 30 Ω; Tj = 25 。C; Figure 11	-	-	1.3	V
VGT	gate trigger voltage	VD = V DRM; RL = 3.3 kΩ; Tj = 125 。C; Figure 11	0.2	-	-	V
ID	off-state leakage current	VD = V DRM(max); VR = VRRM(max); Tj = 125 。C	-	-	500	μA
Dynamic characteristics
dVD/dt	critical rate of rise of	VD = 0.67 V DRM(max); Tj = 110 。C; exponential waveform; gate open; Figure 10
	off-state voltage
	Z0103MA/MN/NA/NN		10	-	-	V/μs
	Z0107MA/MN/NA/NN		20	-	-	V/μs
	Z0109MA/MN/NA/NN		50	-	-	V/μs
dVcom/dt	critical rate of change of commutating voltage	VD = 400 V; IT = 1 A; Tj = 110 。C;
	Z0103MA/MN/NA/NN	dIcom/dt = 0.44 A/ms; gate open	0.5	-	-	V/μs
	Z0107MA/MN/NA/NN		1	-	-	V/μs
	Z0109MA/MN/NA/NN		2	-	-	V/μs