Mr. John chang
Model No.: YZPST-ZP18000-02-1
Brand: YZPST
VTO: 0.74V
IF(AV): 18000A
IF(RMS): 28200A
IFSM: 135000A
VFM: 1.08 0.97V
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2015,ROHS
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Welding diodes
YZPST-ZP18000-02
Features:
All Diffused Structure
. High current density
. Very low on-state voltage drop
. metal case with ceramic insulator
. Ultra-low thermal resistance
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) Half sine, f=50Hz, Tj = -40 to +170oC.
(2) Half sine, 10 msec,Tj = -40 to +170oC.
(3) Maximum junction temperature:Tj = 170 oC.
(4) Parameters are defined below :
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Average value of on-state current IF(AV) 18000 A sine,180o Conduction angle,Tc =85oC RMS value of on-state current IF(RMS) 28200 A Peak one cycle surge (non repetitive) current IFSM 135000 A 10.0 msec ,sine, 180o Conduction angle, Tj = 170 oC I2t I2t 91100000 A2s 10.0 msec, sine, Tj = 170 oC Peak on-state voltage VFM 1.08 0.97 V IFM =12000 A; 25 oC IFM =5000 A; 25 oC Threshold votage VTO 0.74 V Tj = 170 oC Slope resistance rT 0.016 mΩ Tj = 170 oC Reverse Recovery Current (4) IRM(REC) A IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax Reverse Recovery Charge (4) Qrr mC IFM = 1000 A; dIF/dt = 10 A/ms;Tjmax Reverse Recovery Time (4) tRR ms
THERMAL AND MECHANICAL CHARACTERISTICS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating junction temperature range | Tj | -40 | +170 |
| oC |
|
| Storage temperature | Tstg | -40 | +170 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| 0.004 |
| o C/W | Double sided cooled |
| Thermal resistance - case to sink | RQ (j-c) |
| 0.008 |
| o C/W | Single sided cooled |
| Creepage distance on the surface | DS |
| 8 |
| mm |
|
| Air breakdown distance | Da |
| 8 |
| mm |
|
| Mounting force | F | 36 | 44 |
| kN |
|
| Weight | W |
|
| 578 | g |
|
CASE OUTLINE AND DIMENSIONS
Product Categories : Semiconductor Disc Devices(Capsule Type) > Welding Diode
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