Mr. John chang
Model No.: YZPST-53DN04-2
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2015,ROHS
HS Code: 85411000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
HIGH Power Diode FOR MEDIUM FREQUENCY WELDING
WITHOUT HOUSING ULTRATHIN DEVICE
YZPST-53DN04
Features
- High current capability
- Very low thermal impedance
- High power cycling capability
ELECTRICAL CHARACTERISTICS AND RATINGS
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Notes:
All ratings are specified for Tj=25 °C unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60Hz sinusoidal waveform
over the temperature range -40 to +180 °C.
(2) 10 ms max. pulse width
(3) Maximum value for Tj = 180 °C
Conducting
|
Parameter |
Symbol |
Min |
Max |
Typ |
Unit |
Conditions |
|
Average value of forward current |
IF(AV) |
|
6300 |
|
A | 50Hz sinewave,180o conduction, Tc = 126 °C |
|
RMS value of forward current |
IF(RMS) |
|
9890 |
|
A |
|
| Peak one cycle surge (non repetitive) current |
IFSM |
|
70 |
|
kA | 50Hz sinewave,180o conduction, Tj = Tjmax, VR = 0 |
|
I square t |
I2 t |
|
24500 |
|
kA2s |
Tj = Tjmax |
|
Peak forward voltage |
VFM |
|
1.14 |
|
V |
Forward current 10 kA, Tjmax |
|
Threshold voltage |
VF(TO) |
|
0.7 |
|
V |
Tj = Tjmax |
|
Forward slope resistance |
rF |
|
0.046 |
|
mΩ |
Tj = Tjmax |
Thermal and mechanical characteristics and ratings
|
Parameter |
Symbol |
Min |
Max |
Typ |
Unit |
Conditions |
|
Operating temperature |
Tj |
-40 |
180 |
|
°C |
|
|
Storage temperature |
Tstg |
-40 |
180 |
|
°C |
|
| Thermal resistance junction to case |
Rth(j-c) |
|
0.0048 |
|
°C/W |
Double side cooled , DC |
| Thermal resistance junction to case |
Rth(j-c) |
|
0.0062 |
|
°C/W |
Double side cooled, 180° sin |
| Thermal resistance case to sink |
Rth(c-s) |
|
0.0025 |
|
°C/W | Double side cooled, mounting surfaces smooth, flat and greased |
|
Mounting force |
F |
40 |
60 |
|
kN |
|
|
Weight |
W |
|
100 |
|
g |
|
| Analytical expression for Zth(j-c) | ||||
| Zth(j-c) ( t ) = i Ai · ( 1 - exp ( - t / i ) ) | ||||
| i | 1 | 2 | 3 |
|
| Ai |
1.0E-03 |
3.7E-03 |
1.7E-06 | [°C/W] |
|
i |
2.0E-03 |
3.8E-02 |
8.0E-01 | [s] |
Output current (ID) capability for center tap configuration
OUTLINE AND DIMENSIONS
Notice
- We recommend to protect the diode with a temperature resistant O-Ring.
- All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink surfaces with flatness < 0.03 mm and roughness < 2µm
Product Categories : Semiconductor Disc Devices(Capsule Type) > Welding Diode
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