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Home > Products > Semiconductor Module Devices > Thyristor Module > Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A

Thyristor with amplifying gate 1600V Thyristor Module 119A

  • $11.1
    50-999
    Piece/Pieces
  • $8.1
    ≥1000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-SKKT107-16E

BrandYZPST

Place Of OriginChina

VDRM1600V

VRRM1600V

VRSM1700V

IT(AV)119A

IRMS190A

ITSM2250A

I2t25.3KA2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000

TransportationOcean,Land

Place of OriginCHINA

Supply Ability100000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:

Thyristor Modules P/N:YZPST-SKKT107/16E 

Thyristor with amplifying gate 1600V Thyristor Module 119A

Features
 Heat transfer through aluminium nitride ceramic isolated metal baseplate
 Precious metal pressure contacts for high reliability
 Thyristor with amplifying gate
Typical Applications
 DC motor control
 AC motor starters
 Temperature control

 Professional light dimming

VDRM

VRRM

VRSM

1600V

1600V

1700V

YZPST-SKKT107-16E-1 Thyristor Module

Symbol Conditions Values Units
IT(AV) sin. 180; TC=85°C 119 A
IRMS 190
ITSM Tvj=25°C; 10ms 2250 A
I2t Tvj=25°C; 8.3…10ms 25.3 KA2s
VT Tvj=25°C; IT=300A max. 1.75 V
IDD Tvj=125°C; VRD=VRRM; VDD=VDRM max. 20 mA
IRD
tgd Tvj=25°C; IG=1A; diG/dt=1A/μs; VD=2/3VDRM 1 μs
tgr 2
(di/dt)cr Tvj=125°C max. 140 A/μs
(dv/dt)cr Tvj=125°C max. 1000 V/μs
tq Tvj=125°C 200 μs
IH Tvj=25°C; typ. /max. 250 mA
IL Tvj=25°C; RG=33Ω; typ. /max. 600 mA
VGT Tvj=25°C; d.c. min.1.0 V
IGT Tvj=25°C; d.c. min. 35 mA
VGD Tvj=125°C; d.c. max. 0.25 V
IGD Tvj=125°C; d.c. max.4 mA
Rth(j-c) per thyristor /per module 0.19 K/W
Rth(c-s) per thyristor /per module 0.1 K/W
Tvj -40…+130 °C
Tstg -40…+130 °C
Visol a.c. 50Hz; r.m.s.; 1s/1min. 3600/3000 V
YZPST-SKKT107-16E


Product Categories : Semiconductor Module Devices > Thyristor Module

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