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Home > Products > Semiconductor Module Devices > Thyristor Module > Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module
  • Compact Design SK45UT Antiparallel Thyristor Module

Compact Design SK45UT Antiparallel Thyristor Module

  • $18.5
    50-999
    Piece/Pieces
  • $13.5
    ≥1000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-SK45UT16

BrandYZPST

Place Of OriginChina

Vrsm1700V

Vrrw1600V

Vdrm1600V

LRMS47A (full conduction)

Vtmax. 1,9V

Vt(to)max. 1V

RTmax. 10

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000

TransportationOcean,Land

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Antiparallel Thyristor Module
P/N:YZPST-SK45UT
Features
•Compact Design
•One screw mounting
•Heat transferand isolation through direct copper bonded aluminium oxide ceramic (DBC)
•Glass passived thyristor chips
•Up to 1600V reverse voltage
Typical Applications
•Soft starters
•Light control (studios, theaters...)

•Temperature control

Compact Design SK45UT Antiparallel Thyristor Module

Vrsm Vrrw Vdrm lRMS = 47A (full conduction)
V V (Ts = 85 °C)
900 800 SK 45 UT 08
1300 1200 SK45 UT12
1700 1600 SK45 UT16
Symbol Conditions Values Units
Irms W1C : sin. 180°: Ts=100oC 33 A
W1C;sin.180o;Ts = 85oC 47 A
Itsm Tvj = 25 oC;10ms 450 A
i2t Tvj = 125oC;10ms 380 A
T/25 oC;8,3...10ms 1000 A2s
Tvj = 125oC;8,3...10ms 720 A2s
Vt T/25 °C, lT = 75A max. 1,9 V
Vt(to) Tvj = 125oC max. 1 V  mQ mA
rT Tvj = 125oC max. 10
IRD T/125°C, VRD=VRRM max. 10
IrD
tgd Tvj = 25 OC, lG = 1A; diG/dt= 1 A/ps 1 MS
Vd = 0,67*Vdrm 2 MS
(dv/dt)cr Tvj = 125oC 1000 V/ps
(di/dt)cr tq lH Tvj = 125oC; f= 50...60 Hz 50 A/ps
II Tvj = 125 °C; typ. 80 MS mA mA
TVj = 25 °C; typ. / max. 80/150
TVj = 25 °C;Rg = 33Q; typ. / max. 150/300
Vgt 歸二25 °C; d.c. 歸二25 °C; d.c. min. 3 min. 100 max. 0,25 V  mA
IGT Tvj = 125oC;d.c. max. 3 V  mA
Vgd Tvj = 125oC;d.c.
Igd
Khfj-s) cont. per thyristor sin 180° per thyristor cont. perWIC sin 180° perWIC 1,2 K/W
Khfj-s) terminals, 10s 1,24 K/W
L 0,6 K/W
Tstg 0,62 K/W
^solder -40...+125 °C
-40...+125 °C
260 °C
Vis。] a. c. 50 Hz; r.m.s.; 1s/1 min. Mounting torque to heatsink 3000/2500 V~
Ms 2,5 Nm
Mt 30 Nm m/s2
a g
m
Case T13
Dimensions
Dimensions

Product Categories : Semiconductor Module Devices > Thyristor Module

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