Mr. John chang
Model No.: YZPST-CLA100E16
Brand: YZPST
Place Of Origin: China
Tstg: -40 ~ 150℃
TJ: -40~ 125℃
VDRM: 1200/1600V
VRRM: 1200/1600V
VDSM: VDRM +100V
VRSM: VRRM +100V
IT(RMS): 160A
ITSM: 1150A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Express
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
| ABSOLUTE MAXIMUM RATINGS | |||
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | |||
| Operating junction temperature range | -40~ 125 | ℃ | |
| Repetitive peak off-state voltage (T =25℃) | V | ||
| Repetitive peak reverse voltage (T =25℃) | V | ||
| Non repetitive surge peak Off-state voltage | V | ||
| Non repetitive peak reverse voltage | V | ||
| RMS on-state current (T = 100℃) | A | ||
| Non repetitive surge peak on-state current | 1150 | A | |
| Average on-state current (180° conduction angle) | IT(AV) | 100 | A |
| I2t value for fusing (tp= 10ms) | I2t | 6600 | A2 S |
| Critical rate of rise of on-state curren t(I =2×IGT, tr ≤ 100 ns) | di/dt | 150 | A/μS |
| Peak gate current | IGM | 5 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | ||||
| Symbol | Test Condition |
| Value | Unit |
| IGT | V = 12V R = 140Ω | MAX. | 40 | mA |
| VGT | MAX. | 1.5 | V | |
| VGD | VD=VDRM Tj=125℃ R=1KΩ | MIN. | 0.2 | V |
| IL | IG= 1.2IGT Tj=25℃ | MAX. | 250 | mA |
| IH | VD=12V Tj=25℃ | MAX. | 200 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | V/μs |
TO-247 Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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