Mr. John chang
Model No.: YZPST-S5560-12M
Brand: YZPST
Place Of Origin: China
Tstg: -40 ~ 150℃
Tj: -40~ 125℃
VDRM: 1200/1600V
VRRM: 1200/1600V
VDSM: VDRM +100V
VRSM: VRRM +100V
IT(RMS): 55A
ITSM: 550A
IT(AV): 35A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 100000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Lighting and temperature control
| ABSOLUTE MAXIMUM RATINGS | ||||
| Parameter | Symbol | Value | Unit | |
| Storage junction temperature range | Tstg | -40 ~ 150 | ℃ | |
| Operating junction temperature range | Tj | -40~ 125 | ℃ | |
| Repetitive peak off-state voltage (T =25℃) | VDRM | 1200/1600 | V | |
| Repetitive peak reverse voltage (T =25℃) | VRRM | 1200/1600 | V | |
| Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V | |
| Non repetitive peak reverse voltage | VRSM | VRRM +100 | V | |
| RMS on-state current | TO-3PIns.(TC=80℃) | IT(RMS) | 55 | A |
| TO-247(TC=85℃) | ||||
| Non repetitive surge peak on-state current | ITSM | 550 | A | |
| Average on-state current (180° conduction angle) | IT(AV) | 35 | A | |
| I2t value for fusing (tp= 10ms) | I2t | 1500 | A2 S | |
| Critical rate of rise of on-state current | di/dt | 150 | A/μS | |
| (I =2×IGT, tr ≤ 100 ns) | ||||
| Peak gate current | IGM | 5 | A | |
| Average gate power dissipation | PG(AV) | 2 | W | |
| Thermal Resistances | ||||
| Symbol | Parameter | Value | Unit | |
| TO-3P | 0.65 | |||
| Rth(j-c) | Junction to case (DC) | TO-247 | 0.6 | ℃/W |
| ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | ||||
| Symbol | Test Condition | Value | Unit | |
| IGT | V = 12V R = 140Ω | MAX. | 60 | mA |
| VGT | MAX. | 1.3 | V | |
| VGD | VD=VDRM Tj= 125℃ | MIN. | 0.2 | V |
| IL | IG= 1.2IGT | MAX. | 250 | mA |
| IH | IT=50mA | MAX. | 200 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | V/μs |
| STATIC CHARACTERISTICS | ||||
| Symbol | Parameter | Value(MAX.) | Unit | |
| VTM | ITM =80A tp=380μs | Tj =25℃ | 1.8 | V |
| IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 20 | μA |
| IRRM | Tj =125℃ | 8 | mA | |
TO-3P Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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