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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > BT151 Series 12A BT151-500R-L TO-220 SCR
  • BT151 Series 12A BT151-500R-L TO-220 SCR
  • BT151 Series 12A BT151-500R-L TO-220 SCR
  • BT151 Series 12A BT151-500R-L TO-220 SCR
  • BT151 Series 12A BT151-500R-L TO-220 SCR
  • BT151 Series 12A BT151-500R-L TO-220 SCR

BT151 Series 12A BT151-500R-L TO-220 SCR

  • $0.11
    5000-49999
    Piece/Pieces
  • $0.09
    ≥50000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BT151-500R-L

BrandYZPST

Place Of OriginChina

IT(RMS)12A

VDRM500V

VRRM500V

IGT15mA

Tstg-40 ~150℃

Tj-40~125℃

ITSM100A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

BT151 Series     12A SCRs

YZPST-BT151-500R-L

BT151 Series 12A BT151-500R-L TO-220 SCR
DESCRIPTION:

Glasspassivated thyristors in aplastic envelope, The BT151 SCRs series is suitable to fit all modes of control,found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits

YZPST-BT151-500R-L(4)

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

12

A

VDRM VRRM

650

V

IGT

15

mA

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~ 150

Operating junction temperature range

Tj

-40~ 125

Repetitive peak off-state voltage (T =25)

VDRM

650

V

Repetitive peak reverse voltage (T =25)

VRRM

650

V

RMS on-state current (T = 105)

IT(RMS)

12

A

Non repetitive surge peak on-state current

( 180° conduction angle, F=50Hz)

ITSM

100

A

Average on-state current ( 180° conduction angle)

IT(AV)

8

A

I2t value for fusing (tp= 10ms)

I2t

45

A2S

Critical rate of rise of on-state current

(I =2 ×IGT, tr  ≤   100 ns)

di/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

ELECTRICAL CHARACTERISTICS (T=25unless otherwise specified)

Symbol

Test Condition

 

Value

Unit

IGT

V = 12V R = 140Ω

MAX.

15

mA

VGT

MAX.

1.3

V

VGD

VD=VDRM Tj=125 R= 1KΩ

MIN.

0.2

V

IL

IG= 1.2IGT

MAX.

50

mA

IH

IT=50mA

MAX.

30

mA

dV/dt

VD=2/3VDRM Gate Open    Tj=125

MIN.

400

V/μs

STATIC CHARACTERISTICS

Symbol Parameter ValueMAX. Unit
VTM ITM =23A tp=380μs Tj =25 1.6 V
IDRM VD=VDRM VR=VRRM Tj =25 5 μA
IRRM Tj =125 2 mA

Thermal Resistances

Symbol Parameter Value Unit
TO-220M1 60
Rth(j-a) junction to    ambient TO-220FW 50
TO-252 70
TO-220M1 1.5 /W
Rth(j-c) Junction to case TO-220FW 4.5
TO-252 2

TO-220    Package Mechanical Data
YZPST-BT151-500R-L TO-220


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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