Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Model No.: YZPST-1690-TO-247S
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-1690-TO-247S
DESCRIPTION:
PST1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etcSCR transistor Power Transistor price with great price
ABSOLUTE MAXIMUM RATINGS
Parameter | Symbol | Value | Unit |
Storage junction temperature range | Tstg | -40-150 | ℃ |
Operating junction temperature range | Tj | -40-125 | ℃ |
Repetitive peak off-state voltage | VDRM | 1600 | V |
Repetitive peak reverse voltage | VRRM | 1600 | V |
Average on-state current (TC=80℃) | IT(AV) | 56 | A |
RMS on-state current(TC=80℃) | IT(RMS) | 90 | A |
Non repetitive surge peak on-state current (tp=10ms) |
ITSM |
1250 |
A |
I2t value for fusing (tp=10ms) | I2t | 7800 | A2s |
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
150 |
A/μs |
Peak gate current | IGM | 10 | A |
Peak gate power | PGM | 20 | W |
Average gate power dissipation(Tj=125℃) | PG(AV) | 2 | W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol |
Test Condition | Value |
Unit | ||
MIN. | TYP. | MAX. | |||
IGT |
VD=12V RL=30Ω | 10 | - | 80 | mA |
VGT | - | - | 1.5 | V | |
VGD | VD=VDRM Tj=125℃ | 0.25 | - | - | V |
IL |
IG=1.2 IGT | - | - | 200 | mA |
IH |
IT=1A | - | - | 150 | mA |
dV/dt | VD=2/3VDRM Tj=125℃ Gate Open | 1000 | - | - | V/μs |
STATIC CHARACTERISTICS
Symbol | Parameter | Value(MAX) | Unit | |
VTM | ITM=110A tp=380μs | TC=25℃ | 1.8 | V |
IDRM |
VD=VDRM VR=VRRM | TC=25℃ | 50 | μA |
IRRM | TC=125℃ | 10 | mA |
THERMAL RESISTANCES
Symbol | Parameter | Value | Unit |
Rth(j-c) | junction to case(DC) | 0.27 | ℃/W |
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.