Mr. John chang
Model No.: YZPST-100-8
Brand: YZPST
Application: Not Applicable
Supply Type: Original Manufacturer, Odm, Agency, Retailer
Reference Materials: Datasheet, Photo, Eda/Cad Models
Package Type: Surface Mount
Installation Method: Not Applicable
FET Function: Not Applicable
Configuration: Not Applicable
Tstg: -40 ~150°C
Tj: -40 ~125°C
VDRM: 900V
VRRM: 900V
IT(RMS): 1.0A
ITSM: 12A
I2t: 0.72A2S
Packaging: For more detailed product information and transaction information, please contact our email address : info@yzpst.com
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
| ABSOLUTE MAXIMUM RATINGS | |||
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~ 150 | ℃ |
| Operating junction temperature range | Tj | -40~ 125 | ℃ |
| repetitive surge peak Off-state voltage | VDRM | 900 | V |
| repetitive peak reverse voltage | VRRM | 900 | V |
| RMS on-state current | IT(RMS) | 1.0 | A |
| Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz,t=10ms/60Hz,8 3ms) | ITSM | 12 | A |
| I2t value for fusing (tp= 10ms) | I2t | 0.72 | A2S |
| Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | di/dt | 50 | A/μS |
| Peak gate current | IGM | 0.5 | A |
| Average gate power dissipation | PG(AV) | 0.1 | W |
| Maximum device temperature for solderingPurposes (for 10 seconds maximum) | TL | 260 | ℃ |
| ESD level | HBM | Class 3 (4000-16000V) |
|
| Humidity sensitive level | MSL | Three-level (30℃,60%RH,168h) |
|
| Thermal Resistances | ||||
| Symbol | Parameter | Value | Unit | |
| TO-92 | 70 | |||
| Rth(j-c) | Junction to tab (DC) | SOT-223 | 25 | ℃/W |
| ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | |||||
| Symbol | Test Condition | Value | Unit | ||
| MlV | TYP | MAX | |||
| IGT | V = 12V R = 140Ω | 20 | 40 | 120 | 4A |
| VGT | - | - | 1 0 | V | |
| VGD | VD=VDRM Tj=125℃ R= 1KΩ | 0.2 | - | - | V |
| IL | IG= 1.2IGT | - | - | 6 | mA |
| IH | IT=50mA | - | - | 5 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | 50 | - | - | V/ μs |
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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