Mr. John chang
Model No.: YZPST-MJE2955T
Brand: YZPST
VCBO: -70V
VCEO: -60V
VEBO: -5V
IC: -10A
PTOT: 75W
Tj: 150℃
Tstg: -55-150℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 10000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 100000
Certificate: ISO9001-2015,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
PNP SILICON POWER TRANSISTORS MJE2955T
DESRCRIPTION:
The MJE2955T is an PNP Transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.
Package form: TO-220
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -70 | V |
| VCEO | Collector-Emitter Voltage | -60 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Continuous Collector Current | -10 | A |
| PTOT | Total dissipation at Tcase=25 ℃ | 75 | W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature Range | -55-150 | ℃ |
● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
| Symbol | Parameter | Test Condition | Value | Unit | ||
| Min | Type | Max | ||||
| VCBO | Collector-Base Breakdown Voltage | IC= -10mA | -70 |
|
| V |
| VCEO | Collector-Emitter Breakdown Voltage | IC= -200mA | -60 |
|
| V |
| VEBO | Emitter-Base Breakdown Voltage | IE= -10mA | - 5 |
|
| V |
| ICBO | Collector Cutoff Current | VCB= -70V |
|
| 1 | mA |
| IEBO | Emitter Cutoff Current | VEB= -5V |
|
| 5 | mA |
| hFE | DC Current Gain | IC= -4A,VCE= -4V | 20 |
| 100 |
|
| VCE(sat) | Collector-Base Breakdown Voltage | IC= -4A,IB= -0.4A |
|
| -1.1 | V |
| VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A,IB= -4A |
|
| -1.8 | V |
| fT | Transition Frequency | VCE=10V, IC=0.5A， f=1MHZ | 2 |
|
| MHZ |
| a：Pulse Test，tp ≤300us，δ≤2% | ||||||
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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