Mr. John chang
Model No.: YZPST-S4050
Brand: YZPST
Place Of Origin: China
Tstg: -40 ~ 150℃
Tj: -40~ 125℃
VDRM: 1600V
VRRM: 1600V
VDSM: VDRM +100V
VRSM: VRRM +100V
ITSM: 420A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Express,Others
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
P/N: YZPST-S4050 40A SCRs
| ABSOLUTE MAXIMUM RATINGS | |||
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~ 150 | ℃ |
| Operating junction temperature range | Tj | -40~ 125 | ℃ |
| Repetitive peak off-state voltage | VDRM | 1600 | V |
| Repetitive peak reverse voltage | VRRM | 1600 | V |
| Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V |
| Non repetitive peak reverse voltage | VRSM | VRRM +100 | V |
| Non repetitive surge peak on-state current | ITSM | 420 | A |
| RMS on-state current (180° conduction angle) | IT(RMS) | 40 | A |
| Average on-state current (180° conduction angle) | IT(AV) | 25 | A |
| I2t value for fusing (tp= 10ms) | I2t | 880 | A2 S |
| Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | di/dt | 150 | A/μS |
| Peak gate current | IGM | 4 | A |
| Peak gate power | PGM | 5 | W |
| Thermal Resistances | ||||
| Symbol | Parameter | Value | Unit | |
| TO-220A | 1.2 | |||
| Rth(j-c) | Junction to case (DC) | TO-220C | 0.8 | ℃/W |
| TO-220F | 0.85 | |||
| ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | ||||
| Symbol | Test Condition |
| Value | Unit |
| IGT | V = 12V R = 140Ω | MAX. | 50 | mA |
| VGT | MAX. | 1.5 | V | |
| VGD | VD=VDRM Tj= 125℃ | MIN. | 0.2 | V |
| IL | IG= 1.2IGT | MAX. | 200 | mA |
| IH | IT=50mA | MAX. | 100 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | V/μs |
TO-220F Package Mechanical Data
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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