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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High voltage capacity S3530 35A SCR TO220F

High voltage capacity S3530 35A SCR TO220F

  • $1.2
    500-1999
    Piece/Pieces
  • $0.6
    ≥2000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-S3530

BrandYZPST

Place Of OriginChina

Tstg-40 ~ 150℃

Tj-40~ 125℃

VDRM1600V

VRRM1600V

VDSMVDRM +100V

VRSMVRRM +100V

IT(RMS)35A

ITSM300A

IT(AV)23A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N: YZPST-S3530 35A SCRs
FEATURES
 High thermal cycling performance
 High voltage capacity

 Very high current surge capability 

APPLICATIONS

 Line rectifying 50/60 Hz
 Softstart AC motor control
 DC Motor control
 Power converter
 AC power control

 Lighting and temperature control

YZPST-S3530

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction  temperature range

Tstg

-40 ~ 150

Operating junction temperature range

Tj

-40~ 125

Repetitive peak off-state voltage (T =25℃)

VDRM

1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

1600

V

Non repetitive surge peak Off-state voltage

VDSM

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

VRRM +100

V

RMS on-state current (T = 110℃)

IT(RMS)

35

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

ITSM

300

A

Average on-state current (180° conduction angle)

IT(AV)

23

A

I2t value for fusing (tp= 10ms)

I2t

450

A2 S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

dI/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

2.5

℃/W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

 

Value

Unit

IGT

V = 12V R = 140Ω

MAX.

30

mA

VGT

MAX.

1.3

V

VGD

VD=VDRM Tj= 125

MIN.

0.2

V

IL

IG= 1.2IGT

MAX.

160

mA

IH

IT=500mA

MAX.

120

mA

dV/dt

VD=2/3VDRM Gate Open  Tj=125℃

MIN.

500

V/μs

STATIC CHARACTERISTICS
Symbol Parameter Value(MAX.) Unit
VTM ITM =35A tp=380μs Tj =25℃ 1.5 V
IDRM VD=VDRM VR=VRRM Tj =25℃ 20 μA
IRRM Tj =125℃ 4 mA

TO-220F Package Mechanical Data

TO-220F Package Mechanical Data

Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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