Mr. John chang
Model No.: YZPST-S2535-12C
Brand: YZPST
Place Of Origin: China
IT(RMS): 40A
VDRM: 1200V
VRRM: 1200V
IGT: 35mA
Tstg: -40 ~150℃
Tj: -40~125℃
VDSM: VDRM +100V
VRSM: VRRM +100V
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land
Place of Origin: CHINA
Supply Ability: 10000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
P/N: YZPST-S2535 Series 25A SCRs
25A YZPST-S2535 SCRs series is suitable to fit all modes of control
DESCRIPTION:
Glass passivated thyristors in a plastic envelope, The YZPST-S2535 SCRs series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition, Softstart AC motor control and voltage regulation circuits…
| Symbol | Value | Unit |
| IT(RMS) | 40 | A |
| VDRM VRRM | 1200 | V |
| IGT | 35 | mA |
ABSOLUTE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40 ~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (T =25℃) | VDRM | 1200 | V |
| Repetitive peak reverse voltage (T =25℃) | VRRM | 1200 | V |
| Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V |
| Non repetitive peak reverse voltage | VRSM | VRRM +100 | V |
| RMS on-state current (T =100℃) | IT(RMS) | 40 | A |
| Non repetitive surge peak on-state current | ITSM | 350 | A |
| Average on-state current (180° conduction angle) | IT(AV) | 25 | A |
| I2t value for fusing (tp=10ms) | I2t | 450 | A2S |
| Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | dI/dt | 150 | A/μS |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| Symbol | Test Condition |
| Value | Unit |
| IGT | V =12V R =140Ω | MAX. | 35 | mA |
| VGT | MAX. | 1.3 | V | |
| VGD | VD=VDRM Tj=125℃ R=1KΩ | MIN. | 0.2 | V |
| IL | IG=1.2IGT | MAX. | 75 | mA |
| IH | IT=50mA | MAX. | 50 | mA |
| dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 500 | V/μs |
STATIC CHARACTERISTICS
Thermal Resistances Symbol Parameter Value(MAX.) Unit VTM ITM =40A tp=380μs Tj =25℃ 1.65 V IDRM VD=VDRM VR=VRRM Tj =25℃ 500 μA IRRM Tj =125℃ 6 mA
TO-220C Package Mechanical Data Symbol Parameter Value(MAX.) Unit Rth(j-a) junction to ambient(DC) 60 Rth(j-c) Junction to case (DC) 0.9 ℃/W
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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