Mr. John chang
Model No.: YZPST-2P4M 10-30UA
Brand: YZPST
Place Of Origin: China
IT(RMS): 2.0A
IGT: ≤200μA
VDRM: 600V
VRRM: 600V
Tstg: -40~150℃
Tj: -40~110℃
ITSM: 20A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000000
Transportation: Ocean,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
2P4M 2A Sensitive SCRs
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 2.0 | A |
| IGT | ≤200 | μA |
| VDRM/VRRM | 600 | V |
ABSOLUTE MAXIMUM RATINGS:
Parameter Symbol Value Unit Storage junction temperature range Tstg -40~150 ℃ Operating junction temperature range Tj -40~110 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600 V RMS on-state current IT(RMS) 2 A Non repetitive surge peak on-state current (full cycle, F=50Hz) ITSM 20 A I2t value for fusing (tp=10ms) I2t 2 A2s Critical rate of rise of on-state current (IG=2 × IGT) dI/dt 50 A/ μs Peak gate current IGM 0.2 A Average gate power dissipation PG(AV) 0.1 W Peak gate power PGM 0.5 W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
| Symbol | Value | ||||
| Test Condition | MIN | TYPE | MAX | Unit | |
| IGT | VD=12V, RL=33Ω | - | 50 | 200 | μA |
| VGT | - | 0.6 | 0.8 | V | |
| VGD | VD=VDRM Tj=110℃ | 0.2 | - | - | V |
| IH | IT=50mA | - | - | 5 | mA |
| IL | IG=1.2IGT | - | - | 6 | mA |
| dV/dt | VD=2/3×VDRM Tj=110℃ RGK=1KΩ | 20 | - | - | V/ µs |
STATIC CHARACTERISTICS
PACKAGE MECHANICAL DATA Symbol Test Condition Value Unit VTM ITM=4A tp=380μs Tj=25℃ MAX 1.5 V IDRM VD=VDRM= VRRM RGK=1KΩ Tj=25℃ MAX 5 µA IRRM Tj=110℃ 0.1 mA
Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)
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