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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > 800V semiconductors scr electronic

800V semiconductors scr electronic

  • $0.022
    1000-9999
    Piece/Pieces
  • $0.018
    ≥10000
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1000 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-X0206

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity10000

TransportationOcean,Air

Place of OriginCHINA

Supply Ability100000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Scr Semiconductor Device

YZPST-X0206

Scr Semiconductor Device 800V of Applications   ●Leakage protector, timer, and gas igniter ● Temperate controller


Scr Semiconductor Device

Scr Semiconductor Device


Maximum Ratings(Ta=25)                                                       

Parameter

Symbol

Voltage class

Unit

-6

-8

Repetitive peak reverse voltage

VRRM

600

800

V

Repetitive peak off-state voltage

VDRM

600

800

V

RMS on-state current 

IT (RMS)

1.25

A

Average on-state current

IT (AV)

0.8

A

Surge on-state current  

ITSM

22.5

A

I2t for fusing    

I2t

2.5

A2s

Average gate power dissipation 

PG (AV)

0.2

W

Peak gate reverse voltage

VRGM

8

V

Peak gate forward current

IFGM

1.2

A

Junction temperature

Tj

– 40 to +125

°C

Storage temperature

Tstg

– 40 to +150

°C


Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

IRRM

-

-

0.5

mA

Tj =125°C, VRRM applied

Repetitive peak off-state current

IDRM

-

-

0.5

mA

Tj =125°C, VDRM applied, RGK = 1 kÙ

On-state voltage  

VTM

-

-

1.45

V

Ta =25°C, ITM =2.5A

Gate trigger voltage   

VGT

-

-

0.8

V

Tj =25°C, VD = 12 V, RL = 140Ù

Gate non-trigger voltage

VGD

0.1

-

-

V

Tj =125°C, VD = VDRM,RGK = 1 kÙ

Gate trigger current

IGT

20

-

200

μA

Tj =25°C, VD = 12 V, RL = 140Ù

Holding current

IH

-

-

5

mA

Tj =25°C, VD = 12 V,RGK = 1 kÙ

Thermal resistance   

Rth (j-a)

-

-

150

°C/W

Junction to ambient

 

Trigger Current Item

Item

A

B

C

D

E

F

IGT (μA)

20 to 50

40 to 80

70 to 100

20 to 80

20 to 100

100 to 200


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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