Mr. John chang
Model No.: YZPST-SHR400R22
Brand: YZPST
VDRM / VRRM: 1300v
IDRM: 35ma
DV/dt: 1000 V/Sec
ITRMS: 630a
IT(AV): 400a
ITSM: 7200a
VTM: 3.0v
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-SHR400R22 Fast Switching Reverse-conducting Thyristor
RCT FOR INVERTER AND CHOPPER APPLICATIONS
Features:
All Diffused Structure
Interdigitated Amplifying Gate Configuration
Blocking capabilty up to 1300 volts
Guaranteed Maximum Turn-Off Time
High dV/dt Capability
Pressure Assembled Device
Blocking - Off State
| Device Type | VDRM | VDSM |
| SHR400R22 | 1300 | 1300 |
VDRM = Repetitive peak off state voltage
VDSM = Non-repetitive peak off state voltage
(Non-repetitive<5ms, Tj=0～115℃)
| Repetitive peak off state leakage | IDRM | 35 mA |
| Critical rate of voltage rise | dV/dt | 1000 V/msec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ | Units | Conditions |
| RMS value of on-state current | ITRMS |
| 630 |
| A | Nominal value |
| Average on-state current | IT(AV) |
| 400 |
| A | Continuous single-phase,half sine wave,180°conduction |
| Peak one cycle surge on-state current(non repetitive) | ITSM |
| 7200 |
| A | 50Hz, sinusoidal wave- shape, 180o conduction, Tj = 115 oC |
| I2t Limit Value | I2t |
| 200x103 (On-Current) |
| A2s |
|
| 31x103 (Reverse Current) | ||||||
| Peak on-state voltage | VTM |
| 3.0 |
| V | ITM =1250A; Tj = 25 oC |
| Critical rate of rise of on-state current | di/dt |
| 100 |
| A/ms | VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=115℃ |
| Average reverse current | IR(AV) |
| 150 |
| A | Continuous single-phase,half sine wave,180°conduction |
| RMS reverse currrnt | IR(RMS) |
| 235 |
| A |
|
| Peak reverse voltage | VRM |
| 2.5 |
| V | IRM=500A, Tj = 25 oC |
| Peak one cycle surge reverse current(non repetitive) | IRSM |
| 2500 |
| A | 50Hz, sinusoidal wave- shape, 180o conduction, Tj = 115 oC |
| Critical rate of rise of commutating off-state voltage | (dv/dt)C | 200 |
|
| A/ms | ITM=2000A,tw=60us,IRM=1000A, ,VDM=1/2VDRM,Pulse width 60ms ,Tj=115℃, |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 20 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 4 |
| W |
|
| Peak gate current | IGM |
| 4 |
| A |
|
| Gate current required to trigger all units | IGT |
| 200
|
| mA
| VD = 6 V;RL = 6 ohms;TC = 25 oC |
| Holding current | IH |
| 500 |
|
| Tj = 25 oC ;RL = 6 ohms |
| Gate voltage required to trigger all units | VGT |
| 3.0 |
| V | VD = 6 V;RL = 6 ohms;TC = 25oC |
| Peak non- trigger voltage | VGD |
| 0.15 |
| V | Tj = 115 oC;VD=1/2VDRM |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)
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