Mr. John chang
Model No.: YZPST-FR1000AX50
Brand: YZPST
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
FR1000AX50 Fast Switching Reverse-conducting Thyristor
RCT FOR INVERTER AND CHOPPER APPLICATIONS
2500 VDRM; 1550 A rms
YZPST-FR1000AX50
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 2500 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| Device Type | VDRM (1) | VDSM (1) |
| FR1000AX50 | 2500 | 2500 |
VDRM = Repetitive peak off state voltage
| Repetitive peak off state leakage | IDRM
| 20 mA 80mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 700 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Conducting - on state
| Parameter | Symbol |
| Max. | Typ. | Units | Conditions |
| RMS value of on-state current | ITRMS |
| 1550 |
| A | Nominal value |
| Average on-state current | IT(AV)
|
|
1000 |
|
A | Continuous single-phase,half sine wave,180°conduction |
| Peak one cycle surge (non repetitive) current |
ITSM |
|
14000 |
|
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 8.2.x105 |
| A2s | 8.3 msec and 10.0 msec |
| RNS reverse currrnt | IR(RMS) |
| 630 |
| A |
|
| Average reverse current | IR(AV) |
| 400 |
| A | Continuous single-phase,half sine wave,180°conduction |
| Peak on-state voltage | VTM |
| 2.2
|
| V | ITM=1000A Tj = 125 oC |
| Peak reverse voltage | VRM |
| 4.0 |
| V | IRM=1200A, Tj = 125 oC |
| Critical rate of rise of on-state current | di/dt |
| 300 |
| A/ms | VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃ |
| Critical rate of decrease of reverse conmmutating current | (di/dt)C |
| 200 |
| A/ms | ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 8 |
| W |
|
| Peak gate current | IGM |
| 10 |
| A |
|
| Gate current required to trigger all units | IGT |
| 350
|
| mA
|
VD = 6 V;RL = 2 ohms;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 4
|
| V
| VD = 6 V;RL = 2 ohms;Tj = 25oC
|
| Peak non- trigger voltage | VGD |
| 0.2 |
| V | Tj = 125 oC;VD=1/2VDRM |
Dynamic
| Parameter | Symbol | . | Max. | Typ. | Units | Conditions |
| Turn-off time | tq |
| 50
|
| ms | ITM =4000 A; di1/dt = -200A/ms; di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V Tj = 125 oC;tw=60us |
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THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thyristor part thermal resistance - junction to fin | RQⅠ (j-f) |
| 0.022
|
| oC/W | Double sided cooled
|
| Diode part thermal resistamce – junction to fin | RQⅢ (j-f) |
| 0.070
|
| oC/W | Double sided cooled
|
| Mounting force | P |
| 45 |
| kN |
|
| Weight | W |
| 670 |
| g |
|
Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)
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