Mr. John chang
Model No.: YZPST-M2639ZC450
Brand: YZPST
Manufacturing Technology: Discrete Device
Material: Compound Semiconductor
VRRM: 4500V
IRRM: 20 MA 150 MA
IF(AV)M: 2639A
IFRMS: 4922A
IFSM: 27.5kA
I2t: 3.79x103kA2s
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 5000
Certificate: ISO9001-2015,ROHS
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
FAST Rectifier
High Surge rating high power fast Rectifier Diode
GENERAL PURPOSE HIGH POWER FAST RECTIFIER
Features:
. All Diffused Structure
. High Surge rating
. Soft Reverse Recovery
. Rugged Ceramic Hermetic Package
. Pressure Assembled Device
Typical Applications:
. Rectifier for Drives Applications
. Medium voltage converters
. Pulsed power applications
. Crowbar Applications
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
| VRRM (1) | VRSM (1) |
| 4500 | 4500 |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage | IRRM | 20 mA 150 mA |
Conducting - on state
| Parameter | Symbol | Min | Max. | Typ | Units | Conditions |
| Max. Average value of on-state current | IF(AV)M |
| 2639 |
| A | Sinewave,180oconduction,Tc=55oC |
| RMS value of on-state current | IFRMS |
| 4922 |
| A | Nominal value |
| Peak one cycle surge (non repetitive) current | IFSM |
| 27.5 |
| kA | Tj=150°C, VR=0,8VRRM, tp=10ms |
| I square t | I2t |
| 3.79x103 |
| kA2s | 10 msec |
| Peak on-state voltage | VFM |
| 2.25 |
| V | IFM =3000 A; Tj = 150 oC |
| Threshold voltage | VFO |
| 1.38 |
|
| Tj = 150 oC |
| Forward slope resistance | rF |
| 0.29 |
| mΩ | Tj = 150 oC |
| Reverse Recovery Current (4) | IRM(REC) |
| - | 280 | A | IFM = 1000 A; dIF/dt = 60 A/ms, Tj = 150 oC |
| Reverse Recovery Charge (4) | Qrr |
| - | 2300 | mC |
|
| Reverse Recovery Time (4) | tRR |
| - | 8.5 | ms |
|
THERMAL AND MECHANICAL CHARACTERISTICS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +150 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| 0.011
|
| K/W | Double sided cooled Single sided cooled |
| Thermal resistance - case to sink | RQ (c-s) |
| 0,.022
|
| K/W | Double sided cooled Single sided cooled |
| Mounting force | P | 37 | 47 | - | kN |
|
| Weight | W |
|
| 1700 | g | About |
CASE OUTLINE AND DIMENSIONS
| Sym | A | B | C | D | H |
| mm | 109 | 73 | 98 | 3.5×3 | 36±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode
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