Mr. John chang
Model No.: YZPST-SD233N/R-35
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 5000
Certificate: ISO9001-2015,ROHS
Port: SHANGHAI
Payment Type: T/T,Paypal
Incoterm: FOB,CFR,CIF
FAST RECOVERY DIODES
PSTSD233N/R
Features
High power Fast Recovery Diode series
1.0 to 2.0 μs recovery time
High voltage ratings up to 5000V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version B-8
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Forward Conduction
Parameters PSTSD233N/R Units Conditions IF(AV Max. average forward current @ Case temperature 250 A 180° conduction, half sine wave 60 °C IF(RMX) Max. RMS forward current 390 A IFSM Max. peak, one-cycle forward non-repetitive surge current 5500 A t = 10ms No voltage reapplied Initial TJ =TJmax. 5760 A t = 8.3ms I2t Maximum I2t for fusing 150000 A2s t = 10ms No voltage reapplied 140000 A2s t = 8.3ms I2√t Maximum I2√t for fusing 1500000 KA2√s I2t for time tx = I2√t x √tx ; 0.1 ≤ tx ≤ 10ms, VRRM = 0V VFM Maximum forward voltage drop 3.0 V TJ = 25 oC, IFM = 1200 (arm) IRRM Max. DC reverse current 10.0 μA TJ = 25 oC, per diode at VRRM Trr 5 μs
Voltage Ratings
| Type numbe | Voltage Code | VRRM , max repetitive peak AC rev. voltage TJ = TJ max. V | VRSM , max non-repetitive peak AC rev. voltage TJ = TJ max. V | IRRM max. @ rated VRRM TJ = TJ max. mA | RRM max. D.C. rev. curr. @ T= 125°C (μA) |
|
PSTSD233N/R | 20
26
30
35
40
45
50 | 2000
2600
3000
3500
4000
4500
5000 | 2100
2700
3100
3600
4100
4600
5100 | 20
20
20
20
20
20
20 | 500
500
500
500
500
500
500 |
Outlines Table
Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode
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