Mr. John chang
Model No.: YZPST-SP50N80FX
Brand: YZPST
Supply Type: Original Manufacturer, Odm, Agency, Retailer
Reference Materials: Datasheet, Photo
Configuration: Array
Current-breakdown: Not Applicable
Current-hold (Ih) (maximum): Not Applicable
Current-off State (maximum): Not Applicable
SCR Number, Diode: Not Applicable
Operating Temperature: -55°c ~ 150°c (Tj)
SCR Type: Standard Recovery
Structure: Not Applicable
Voltage-on: Not Applicable
Voltage-gate Trigger (Vgt) (maximum): Not Applicable
Current-output (maximum): Not Applicable
VDSS: 800V
ID: 50A
IDM: 200A
VGSS: ±30V
EAS: 4500mJ
EAR: 60mJ
P: 690w
TJ, Tstg: -55~+150ºC
Productivity: 100000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
800V N-Channel Power MOSFET
YZPST-SP50N80FX
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
| Device Ordering Marking Packing Information | |||
|
Ordering Number |
Package |
Marking |
Packing |
|
SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
| Absolute Maximum Ratings TC = 25ºC, unless otherwise noted | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage (VGS = 0V) | VDSS | 800 | V |
| Continuous Drain Current | ID | 50 | A |
| Pulsed Drain Current (note1) | IDM | 200 | A |
| Gate-Source Voltage | VGSS | ±30 | V |
| Single Pulse Avalanche Energy (note2) | EAS | 4500 | mJ |
| Repetitive Avalanche Energy (note1) | EAR | 60 | mJ |
| Power Dissipation (TC = 25ºC) | PD | 690 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | ºC |
| Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. | |||
| Thermal Resistance | |||
| Parameter | Symbol | Value | Unit |
| Thermal Resistance, Junction-to-Case | RthJC | 0.18 |
ºC/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | 40 | |
| Specifications TJ = 25ºC, unless otherwise noted | ||||||
|
Parameter |
Symbol |
Test Conditions | Value |
Unit | ||
| Min. | Typ. | Max. | ||||
| Static | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 800 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =800, VGS = 0V, TJ = 25ºC | -- | -- | 1.0 | μA |
| Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | IDS = 250µA | 2.5 | -- | 4.5 | V |
| Drain-Source On-Resistance (Note3) | RDS(on) | VGS = 10V, ID = 25A | -- | 120 | 130 | mΩ |
| Dynamic | ||||||
| Input Capacitance | Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 14600 | -- |
pF |
| Output Capacitance | Coss | -- | 1300 | -- | ||
| Reverse Transfer Capacitance | Crss | -- | 66 | -- | ||
| Total Gate Charge | Qg |
VDD =400V, ID =50A, VGS = 10V | -- | 360 | -- |
nC |
| Gate-Source Charge | Qgs | -- | 80 | -- | ||
| Gate-Drain Charge | Qgd | -- | 120 | -- | ||
| Turn-on Delay Time | td(on) |
VDD = 400V, ID =50A, RG = 10 Ω | -- | 110 | -- |
ns |
| Turn-on Rise Time | tr | -- | 200 | -- | ||
| Turn-off Delay Time | td(off) | -- | 160 | -- | ||
| Turn-off Fall Time | tf | -- | 185 | -- | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Body Diode Current | IS |
TC = 25 ºC | -- | -- | 50 |
A |
| Pulsed Diode Forward Current | ISM | -- | -- | 400 | ||
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 25A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 50A, diF/dt =100A /μs | -- | 520 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 5.0 | -- | μC | |
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
Product Categories : Semiconductor Module Devices > Thyristor Module
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
