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Capacitor for Electric Furnace ( 138 )
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Capacitor For Electric Furnace ( 75 )
Other Capacitors ( 20 )
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(Total 12 Products for 500v Power Mosfet)
YZPST-IXFN64N50 500V Power MOSFET manufacturer
1500V N-Channel MOSFET YZPST-FM3N150C General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and...
Fast switching 1500V N-Channel MOSFET
1500V N-Channel MOSFET YZPST-QM3N150C General Description This Power MOSFET is produced using advanced self- aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and...
Fast switching 500V N-Channel Power MOSFET
P/N: YZPST-SP13N50KF 500V N-Channel Power MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ordering Marking Packing Information
BTA30 Series Triacs YZPST-STC2326 DESCRIPTION The STC2326 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The STC2326 has been designed specifically to improve the overall efficiency of DC/ DC converters using either...
High Power Density 900V MOSFET module factory
Easy to Mount 800V Power MOSFET module
YZPST-IXFN62N80Q3 Power MOSFET module factory and manufacturer
Space Saving 200V Power MOSFET module manufacturer
Low RDS 480A Power MOSFET module factory and manufacturer
65R72GF N-channel Power MOSFET as replacement of STW48N60M2
N-channel Power MOSFET Type:YZPST-65R72GF PRODUCT SUMMARY Vds (V) at Tj max. 700 Rds(ofi)max. at 25°C (mQ) Vgs=10V 72 Qg max. (nC) 130 Qgs (nC) 30 Qgd (nC) 34
N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode VDS = 1700 V RDs(on) = 1.0Q lDS@25°C = 5.0 A Features High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance...
High Quality Products
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