Mr. John chang
Model No.: YZPST-STD60-45
Brand: YZPST
Manufacturing Technology: Discrete Device
Material: Element Semiconductor
Type: Intrinsic Semiconductor
VRRM: 45V
VDC: 45V
VRSM: 54V
IF(AV): 60A
IFSM: 600A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 5000
Certificate: ISO9001-2015,ROHS
Port: SHANGHAI
Payment Type: T/T,Paypal
Incoterm: FOB,CFR,CIF
Schottky Barrier Rectifier Diode
YZPST-STD60-45
Features
• Fast Switching
• Low forward voltage drop, VF
• Guard ring protection
• High surge capacity
• High efficiency, low power loss
Electrical Ratings (TC = 250 C, unless otherwise noted)
| Parameter | Symbol | Values | Units |
| Repetitive peak reverse voltage | VRRM | 45 | V |
| DC blocking voltage | VDC | 45 | V |
| Non-repetitive peak reverse voltage | VRSM | 54 | V |
| Average rectified forward current (TC = 85°C) | IF(AV) | 60 | A |
| Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 50 Hz) | IFSM | 600 | A |
| Maximum Ratings (TC = 250 ( | :unless otherwise noted) |
|
| |
| Parameter | Test Conditions | Symbol | Values | Units |
| Maximum instantaneous forward voltage | IF= 30 A | VF | 0.58 | V |
| IF = 60 A | 0.66 | V | ||
| IF= 120 A | 0.89 | V | ||
| Maximum instantaneous reverse current at rated DC voltage | TC = 25° C | IR | 50 | mA |
| TC = 125° C | 125 | mA | ||
| Thermal & Mechanical Specifications |T[=250C, unless otherwise noted) | |||
| Parameters | Symbol | Values | Units |
| Maximum thermal resistance, junction to case | Wi | 1.0 | °C/W |
| Operating junction temperature range | L | •65 to+150 | °C |
| Storage temperature |
| <65 to+150 | Dc |
| Mounting torque (non*lubricated threads) |
| 15 | in-lb |
| Approximate allowable weight | W | 45.6 | g |
Product Categories : Semiconductor Stud Devices > Standard Recovery Stud Diode
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