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Model No.: YZPST-SKN(R)130-120
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: CHINA
Supply Ability: 5000
Certificate: ISO9001-2015,ROHS
Port: SHANGHAI
Payment Type: T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-SKN(R)130
Standard Recovery Diode based on a barrier formed by contact between metal and semiconductor,
Standard Recovery Diode is also called a metal semiconductor diode because a metal is in contact with an n-type or p-type semiconductor to form a single pole tube with unidirectional conductivity.
Forward Conduction
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Repetitive peak reverse voltage | VRRM |
| 1600 | - | V |
|
Non repetitive peak reverse voltage | VRSM |
| 1700 | - | V |
|
Max. average forward current | IF(AV) |
| 165 | - | A | Sinewave,180o conduction,Tc=100oC |
Max. RMS forward current | IF(RMS) |
| 260 | - | A | Nominal value; Tc=100oC |
Max. peak, one-cycle forward, non-repetitive surge current | IFSM |
| 2500 | - | A | 10.0 msec (50Hz), half sinewave, Tj = 25 oC, VRM = 0.6VRRM |
Maximum I2t for fusing | I2t |
| 31000 | - | A2s | |
Max. forward voltage drop | VF |
| 1.5 |
| V | IF = 500A; Tc=25oC |
Threshold voltage | VF0 |
| 0.85 |
| V | Tj=180°C |
slope resistance | rT |
| 1.3 |
| mΩ |
Features■ High current carrying capability■ High voltage ratings up to 2000V■ High surge current capabilities■ Stud cathode and stud anode version
Typical Applications: ■ Converters ■ High power drives ■ Power supplies ■ Machine tool controls ■ Medium traction applications ■ Power supplies
Thermal and Mechanical Specifications
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +180 |
| oC |
|
Storage temperature | Tstg | -50 | +180 |
| oC |
|
Reverse recovery charge | Qrr |
|
| - | μc |
|
Thermal resistance - junction to case | RQ (j-c) |
| - - | 0.35 | K/W |
|
Thermal resistamce - case to heatsink | RQ (c-s) |
| - - | 0.08 | K/W |
|
Mounting force | P |
|
| 10 | Nm | ± 20% |
Weight | W | - | - | - | g |
|
Case style |
|
|
| - |
| See Outline Table |
Product Categories : Semiconductor Stud Devices > Standard Recovery Stud Diode
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.