Mr. John chang
Model No.: YZPST-T700123503BY
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Phase Control Thyristors
YZPST-T700123503BY
Features of the Phase Control Thyristors: center amplifying gate configuration, compression bonded encapsulation, high DV/DT capability and stud type, thread inch or metric. The typical applications of the High Frequency Thyristors are medium power switching and DC power supplies.
Maximum Ratings And Characteristics
| Symbol | Parameter | Values | Units | Test Conditions | |
| ON-STATE |
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| ITAV | Mean on-state current | 350 | A | Sinewave,180° conduction,Tc=85℃ | |
| ITRMS | RMS value of on-state current | 550 | A | Nominal value | |
| ITSM | Peak one cycle surge (non repetitive) current | 9.1 | KA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | |
| I2t | I square t | 416 | KA2s | 8.3 msec and 10.0 msec | |
| IL | Latching current | - | mA | VD = 24 V; RL= 12 ohms | |
| IH | Holding current | - | mA | VD = 24 V; I = 2.5 A | |
| VTM | Peak on-state voltage | 1.4 | V | ITM = 625 A; Duty cycle £ 0.01%
| |
| di/dt | Critical rate of rise of on-state current | non-repetitive | 800 | A/ms | Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
| repetitive | 150 | ||||
| BLOCKING |
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| VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 1200 | V |
| |
| VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 1300 | V |
| |
| IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 30 | mA | Tj = 125 oC ,VRRM VDRM applied | |
| dV/dt | Critical rate of voltage rise | 1000 | V/ms | TJ=TJmax, linear to 80% rated VDRM | |
| TRIGGEING |
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| PG(AV) | Average gate power dissipation | 3 | W |
| |
| PGM | Peak gate power dissipation | 16 | W |
| |
| IGM | Peak gate current | - | A |
| |
| IGT | Gate trigger current | 150 | mA | TC = 25 oC | |
| VGT | Gate trigger voltage | 3.0 | V | TC = 25 oC | |
| VGD | Gate non-trigger voltage | 0.15 | V | Tj = 125 oC | |
| SWITCHING |
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| tq | Turn-off time | 150 | ms | ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs | |
| td | Delay time | - |
| Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
| Qrr | Reverse recovery charge | - |
|
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Thermal And Mechanical
| Symbol | Parameter | Values | Units | Test Conditions |
| Tj | Operating temperature | -40~125 | oC |
|
| Tstg | Storage temperature | -40~150 | oC |
|
| R th (j-c) | Thermal resistance - junction to case | 0.1 | oC/W | DC operation ,Single sided cooled |
| R th (c-s) | Thermal resistance - case to sink | 0.05 | oC/W | Single sided cooled |
| P | Mounting force | 3.5 | Nm |
|
| W | Weight | - | g | about |
Product Categories : Semiconductor Stud Devices > Phase Control Stud Thyristor
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