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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Latching current 600V TO-252 8A Triac
  • Latching current 600V TO-252 8A Triac
  • Latching current 600V TO-252 8A Triac
  • Latching current 600V TO-252 8A Triac
  • Latching current 600V TO-252 8A Triac
  • Latching current 600V TO-252 8A Triac

Latching current 600V TO-252 8A Triac

  • $0.11
    5000-19999
    Piece/Pieces
  • $0.09
    ≥20000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BT137-600D

BrandYZPST

Place Of OriginChina

IT(RMS)8A

VDRM/VRRM600/800V

VTM≤1.6V

Tstg-40~150℃

Tj-40~125℃

ITSM65A

I2t21A2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

BT137 Series 8A Triacs

DESCRIPTION

With low holding and latching current, BT137

Series triacs are especially recommended for

use on middle and small resistance type power

load.

YZPST-BT137-600D

MAIN FEATURES:

symbol

value

unit

IT(RMS)

8

A

VDRM/VRRM

600/800

V

VTM

≤1.6

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800

V

RMS on-state current

IT(RMS)

8

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

 

ITSM

 

65

 

A

I2t value for fusing (tp=10ms)

I2t

21

A2s

Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W



ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

Parameter Value
Test Condition Quadrant D E F G Unit
Ⅰ- Ⅱ-Ⅲ 5 10 25 50
IGT 10 25 70 100 mA
VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 10 20 40 60 mA
Ⅰ-Ⅲ-Ⅳ 10 30 50 70
IL IG=1.2IGT MAX 20 40 70 100 mA
VD=0.66×VDRM   Tj=125 Gate open
dV/dt MIN 20 50 100 200 V/ µs

PACKAGE MECHANICAL DATA

TO-252



Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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