Mr. John chang
Model No.: YZPST-BTA16-800CW
Brand: YZPST
Place Of Origin: China
IT(RMS): 16A
VDRM: 800V
VRRM: 800V
VTM: ≤ 1.5v
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 160A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000000000
Transportation: Ocean,Land,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
BTA16/BTB16 (BT139) Series16ATriacs
YZPST-BTA16-800CW
With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 16 | A |
| VDRM/VRRM | 600/800/ 1200 | V |
| VTM | ≤ 1.5 | V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (Tj=25C) | VDRM | 600/800/ 1200 | V |
| Repetitive peak reverse voltage (Tj=25C) | VRRM | 600/800/ 1200 | V |
| RMS on-state current | IT(RMS) | 16 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM
| 160
| A
|
| I2t value for fusing (tp=10ms) | I2t | 128 | A2s |
| Critical rate of rise of on-state current(IG=2× IGT) | dI/dt | 50 | A/μs |
| Peak gate current | IGM | 4 | A |
| Average gate power dissipation | PG(AV) | 1 | W |
| Peak gate power | PGM | 5 | W |
ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)
3 Quadrants：
| Parameter | Value | |||||||
| Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
| IGT | VD=12V, | 5 | 10 | 35 | 50 | A | ||
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0 2 | V | |||
| IH | IT=100mA | MAX | 15 | 25 | 40 | 60 | A | |
| Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | m | |||
| IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 90 | A |
| VD=2/3VDRM Tj=125C Gate open | ||||||||
| dV/dt | MIN | 100 | 200 | 500 | 1000 | V/µs | ||
4 Quadrants：
| Parameter | Value | |||||
| Test Condition | Quadrant | C | B | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 25 | 50 | A | |||
| IGT | VD=12V, | Ⅳ | 50 | 70 | A | |
| VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
| VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
| IH | IT=100mA | MAX | 40 | 60 | A | |
| Ⅰ-Ⅲ- Ⅳ | 50 | 70 | m | |||
| IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | A |
| VD=2/3VDRM Tj=125C Gate open | ||||||
| dV/dt | MIN | 200 | 500 | V/µs | ||
STATIC CHARACTERISTICS
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=22.5A tp=380μs | Tj=25C | MAX | 1.5 | V |
| IDRM | Tj=25C | 5 | A | ||
| IRRM | VDRM= VRRM | Tj=125C | MAX | 1 | A |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| Rth(j-c) | TO-220A(Ins) | 2.1 | ℃/W | |
| TO-220B(Non-Ins) | 1.3 | |||
| TO-220F(Ins) | 2.3 | |||
| junction to case(AC) | TO-263 | 2.4 | ||
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
