Mr. John chang
Model No.: YZPST-KP641-16E
Brand: YZPST
V RRM: 1600v
V DRM: 1600v
I T(AV): 641a
I TSM: 9900a
I RRM: 30ma
I DRM: 30ma
V TM: 1.5v
Threshold Voltage V T(TO): 0.99v
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
| Parameter | Symbol | Maximu m Limits | Units | Conditions |
| Repetitive peak reverse voltage | V RRM | 1600 | V |
|
| Repetitive peak off state voltage | V DRM | 1600 | V |
|
| Average value of on-state current | I T(AV) | 641 | A | Sinewave,180 o conduction,T sink =70 ℃ |
| Peak one cycle surge (non repetitive) current | I TSM | 9900 | A | 10.0 msec (50Hz), sinusoidal wave-shape, 180 o conduction, T j = 125 ℃ |
|
| I RRM | 30 | mA | Tj = 125 ℃ |
|
| I DRM | 30 | mA | Tj = 125 ℃ |
| Peak on-state voltage | V TM | 1.5 | V | Tj = 125 ℃ ITM=1000A |
| Threshold voltage | V T(TO) | 0.99 | V | T j =1 25 ℃ |
| Slope resistance | r T | 0.52 | mΩ | T j =1 25 ℃ |
| Average gate power dissipation | P G(AV) | 3 | W |
|
| Gate current | I GT | 300 | mA | V D = 6 V;R L = 3 ohms;T j = +25 ℃ |
| Gate voltage | V GT | 3.5 | V | V D = 6 V;R L = 3 ohms;T j = 0-125 ℃ |
| Latching current | I L | 1000 | mA | V D = 24 V; R L = 12 ohms |
| Holding current | I H | 300 | mA | V D = 24 V; I = 2.5 A |
| Critical rate of voltage rise | dV/dt | 1000 | V/s | VD=2/3VDRM |
| Critical rate of rise of on-state current | di/dt | 200 | A/ s | Switching from V DRM 1000 V, non-repetitive |
| Operating temperature | T | -30-125 | ℃ |
|
| Storage temperature | T stg | -30-125 | ℃ |
CASE OUTLINE AND DIMENSIONS.
Product Categories : Semiconductor Module Devices > Thyristor Module
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