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Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > High Voltage 30A Rectifier Diode

High Voltage 30A Rectifier Diode

  • $0.85
    1000-1999
    Piece/Pieces
  • $0.78
    ≥2000
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-RD3016-TO263

BrandYZPST

Tstg-55 ~150℃

Tj-55 ~150℃

VRRM1600V

IF(AV)30A

IFSM350A

I2t612A2S

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

 


YZPST-ZP3016-RD3016-ZP30A1600V     30A Rectifier  Diode


DESCRIPTION:
The    rectifier    High Voltage Series has been
optimized for very low forward voltage drop. The glass
passivation technology used has reliable operation up to
150 °C junction temperature

High Voltage 30A Rectifier Diode

APPLICATIONS:

• Input rectification
•Semiconductors switches and output rectifiers which are available in identical package outlines


ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Test Conditions

Value

Unit

Storage junction temperature range

Tstg

 

-55 ~ 150

Operating junction temperature range

Tj

 

-55~ 150

Maximum Repetitive peak reverse voltage

VRRM

 

1600

V

Maximum average forward current

IF(AV)

TC = 105 °C, 180°       conduction half sine wave

30

A

Maximum peak one cycle

non-repetitive surge current

 

IFSM

10 ms sine pulse, no voltage reapplied

 

350

 

A

I2t value for fusing (tp=10ms)

I2t

10 ms sine pulse, no voltage reapplied

612

A2S

ELECTRICAL CHARACTERISTICS (T=25unless otherwise specified)

Parameter Symbol Test Conditions Value Unit
Maximum forward voltage drop VFM IF=30 A 1.2 V
Maximum reverse leakage current IRM TJ = 25 °C 5 µA
VR = Rated VRRM
TJ = 150 °C 1 mA
VR = Rated VRRM
Thermal Resistances
Symbol Parameter Value Unit
Rth(j-a) junction to    ambient 45 /W
Rth(j-c) Junction to case 0.9
Ordering Information Scheme

High Voltage 30A Rectifier Diode

TO-263 Package Mechanical Data

High Voltage Rectifier


Product Categories : Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode)

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