Mr. John chang
Model No.: YZPST-HV37-10F
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 100000
Certificate: ISO9001-2008,ROHS
HS Code: 85411000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Frequency High Voltage Diode
YZPST-HV37-10F
8KV High Frequency High Voltage Diode 200mA
Characteristics
1. High junction temperature up to 130℃
2. Low forward voltage drop, and small current leakage
3. Avalanche breakdown protection
4.Max reverse recovery time to 70nS
5. Excellent properties against HV surge impact
6. Axial leading wires which are weldable
7. Epoxy package with anti-corrosion properties on surface
Application
• Rectification for microwave oven
• Industrial microwave power supplies
• HF X ray source
• Laser power supply
• Voltage multiplying circuits
• Rectification of power supplies for other electronic devices
1.Main Specification
No. Item Symbol Unit Rating Conditions 1 Repetitive Peak Reverse Voltage VRRM KV 10 2 Average Forward Current IF (AV) mA 200 Tamb=60 oC 50HZ Sine-half Wave Rectification Average Value 3 Forward Surge Current IFSM A 15 Tamb=25 oC 50HZ Sine-half Wave,One Shot 4 Reverse Surge Current IRSM μA 5 5 Maximum Junction Temperature Tjmax oC 130 6 Storage Temperature Tstg oC -40~+130
2. Electric Specification
|
NO. |
Item |
Symbol | Unit |
Rating |
Test conditions |
|
1 |
Forward Voltage Drop |
VFM |
V |
18max |
IFM=200mA |
|
2 |
Normal Temperature Reverse Current |
IRM1 |
μA |
5max |
VRM=8KV |
|
3 |
High Temperature Reverse Current |
IRM2 |
μA |
5max | Tamb=100oC VRM=8KV |
|
4 |
Reverse Breakdown Voltage |
VZ |
KV |
8 |
IR=200mA |
|
5 |
Reverse Recovery Time |
trr |
nS |
70 |
IF=2mA, IRM=4mA 90% |
(Tamb=25 oC, unless otherwise specified)
3. Application
For high voltage rectification;
4. Derating of Forward Current
5.Dimensions (in mm))
Product Categories : Semiconductor Plastic Package > Plastic Package Diode
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