Mr. John chang
Model No.: YZPST-KP894A-6500V
Brand: YZPST
VRRM: 6500V
VRSM: 894A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
YZPST-KP894A-6500V
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration v
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 6500 | 6500 | 6600 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 200 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Max. average value of on-state current | IT(AV)M |
| 894 |
| A | Sinewave,180o conduction,Tc=60oC |
| RMS value of on-state current | IT(RMS)m |
| 1404 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
12 |
| kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 0.72x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| 3000 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 300 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 2.4 |
| V | ITM = 1000 A ,Tj = 25 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| - |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 200 |
| A/ms | Switching from VDRM £ 1000 V |
| Sym | A | B | C | D | H |
| mm | 75 | 47 | 66 | 3.5×3 | 26±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor
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