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Home > Products > Semiconductor Module Devices > Bridge Rectifier > VVZF70-16 70A Three phase thyristor bridge module

VVZF70-16 70A Three phase thyristor bridge module

  • $15
    10-99
    Piece/Pieces
  • $12
    ≥100
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-VVZF70-16

BrandYZPST

Place Of OriginChina

Id(AV)70A

Id(AVM)70A

IFRMS, ITRMS,36A

VRSM,VDSM.1600V

VRRM,VDRM,1600V

VRGM10V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000

TransportationOcean,Land,Air,Express

Place of OriginCHINA

Supply Ability10000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
THREE PHASE THYRISTOR BRIDGE P/N:YZPST-VVZF70-16
PRODUCT FEATURES
Package with copper base plate
Isolation voltage 3000V~
Planar passivated chips
Low forward voltage drop
1/4” fast-on power terminals
PRODUCT FEATURES
Package with copper base plate
Isolation voltage 3000V~
Planar passivated chips
Low forward voltage drop
1/4” fast-on power terminals
VVZF70-16

ABSOLUTE MAXIMUM RATINGS                                              TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

Id(AV)

 

TJ  =85°C, module

70

A

Id(AVM)

 

module

70

A

IFRMS, ITRMS,

 

per leg

36

A

VRSM,VDSM,

Maximum    None    Repetitive Reverse Voltage

 

1600

V

VRRM,VDRM,

Maximum  Repetitive  Reverse Voltage

 

1600

V

 

IFSM, ITSM

TJ  =45°C, VR =0 V

t = 10ms (50Hz) ,sine

550

A

t = 8.3ms (60Hz) ,sine

600

TJ = 125°C, VR =0 V

t = 10ms (50Hz) ,sine

500

A

t = 8.3ms (60Hz) ,sine

550

 

I2t

TJ  =45°C, VR =0 V

t = 10ms (50Hz) ,sine

1520

A2s

t = 8.3ms (60Hz) ,sine

1520

TJ = 125°C, VR =0 V

t = 10ms (50Hz) ,sine

1250

A2s

t = 8.3ms (60Hz) ,sine

1250

VT

 

TJ  = 25°C,IT = 80A

max.1.64

V

ID, IR

 

TJ  = 125°C, VD = VDRM,VR = VRRM,

max.5

mA

VRGM

 

 

10

V

VTo

 

For power-loss calculations only

0.85

V

rT

 

 

11

m Ω

 

IH

TJ  = 25°C

VD = 6V

<= 200

mA

IL

TJ  = 25°C

IG = 0.45A,diG/dT=0.45A/us,tp= 10us

<= 450

mA

VGT

VD=6 V

TJ  = 25°C

<= 1.5

V

TJ  = -40°C

<= 1.6

IGT

VD=6 V

TJ  = 25°C

<= 100

mA

TJ  = -40°C

<= 200

VGD

TJ  = 125°C,VD = 2/3VDRM

 

<= 0.2

V

IGD

 

 

<= 5

mA

tgd

TJ  = 25°C,VD = 1/2VDRM

IG  = 0.45A,diG/dT=0.45A/us

<= 2

us

tq

TJ  = 125°C,VD = 2/3VDRM

IT = 20A,diG/dT = -10A/us,tp = 200us V R= 100V,dv/dT = 15V/us

250

us

TJ

Junction Temperature

 

-40 to +125

°C

TSTG

Storage Temperature Range

 

-40 to +125

°C

Visol

 

a.c. 50/60Hzr.m.s, 1s/1min

3000/2500

V~

Md

Mounting torqueM5

 

5

N.m

RθJC

Per thyristor/Diode;DC per module

 

0.9

K /W

0.15

Weight

 

 

50

g

 
YZPST-VVZF70-16
 

Product Categories : Semiconductor Module Devices > Bridge Rectifier

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