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Product Categories
Capacitor for Electric Furnace ( 138 )
Semiconductor Plastic Package ( 332 )
Semiconductor Module Devices ( 164 )
Semiconductor Stud Devices ( 74 )
Semiconductor Parts ( 10 )
Capacitor For Electric Furnace ( 75 )
Other Capacitors ( 20 )
Aluminum Electrolytic Capacitors/ Ceramic Capacitors ( 24 )
Thermistor ( 1 )
Litz Wire ( 9 )
Surge Protector and Arrester ( 12 )
Smart Drone Power Supply ( 2 )
Solid State Relay（SSR ） ( 3 )
(Total 12 Products for 800v Bt152 800r Scr)
High Power Inductotherm SCR Thyristor
High Power Thyristor YZPST-5STP24L2800 Features and applications of the High Power Thyristor: Pressure Assembled Device, All Diffused Structure. Guaranteed Maximum Turn-Off Time, High dV/dt Capability. Interdigitated Amplifying Gate Configuration.
800V semiconductors scr electronic
Scr Semiconductor Device YZPST-X0206 Scr Semiconductor Device 800V of Applications ●Leakage protector, timer, and gas igniter ● Temperate controller Maximum Ratings(Ta=25℃)
SG50AA80 two-way scr triac 800V
Triac YZPST-SG50AA80 SG50AA80 two-way scr triac 800V TRIAC(ISOLATED TYPE) SG50AA are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control. ● IT(AV) 50A ● High surge capability 330A ● Tab Terminals Symbol
25TTS08 800V silicon controlled rectifiers Phase control scr
PHASE CONTROL SCR YZPST-25TTS08 Description / Features The 25TTS08 of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 oC junction temperature. Typical applications are in input...
One screw mounting 800V Thyristor Module
YZPST-SK70KQ08 70A 800V Thyristor Module RoHS Compliant PRODUCT FEATURES Compact Design One screw mounting Heat transfer and isolation through DBC Glass passivation thyristor chips Low Leakage Current APPLICATIONS Soft starters Temperature control Light control ABSOLUTE MA
Single Mesa 800V BT152-800R SCR TO-220
BT152-600R/800R Single Mesa 800V BT152-800R SCR TO-220 YZPST-BT152-800R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of...
High thermal cycling performance BT145-800R TO-220 SCR
P/N: YZPST-BT145-800R DESRCRIPTION:
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance.
Features and benefits AC power control High...
20A 800V BT152-800R Single mesa structure SCR
BT152-600R/800R YZPST-BT152-800R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main...
The high ability of current shock resistance 600V BT152-600R SCR
BT152-600R/800R The high ability of current shock resistance 600V BT152-600R SCR YZPST-BT152-600R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal:...
Single Mesa 20A BT152 SCR TO-220
BT152-600R/800R Single Mesa 20A BT152 SCR TO-220 YZPST-BT152 ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock...
High ability of current shock resistance BT152-500RT TO-220 SCR
YZPST-BT152-500RT ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main purposes
Alternating...
Table glass passivation process 600V BT152-600R TO-220 SCR
BT152-600R/800R YZPST-BT152-600R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main...
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