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Capacitor for Electric Furnace ( 138 )
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Capacitor For Electric Furnace ( 75 )
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(Total 6 Products for Bt152 600r Scr)
The high ability of current shock resistance 600V BT152-600R SCR
BT152-600R/800R The high ability of current shock resistance 600V BT152-600R SCR YZPST-BT152-600R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal:...
Single Mesa 800V BT152-800R SCR TO-220
BT152-600R/800R Single Mesa 800V BT152-800R SCR TO-220 YZPST-BT152-800R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of...
Single Mesa 20A BT152 SCR TO-220
BT152-600R/800R Single Mesa 20A BT152 SCR TO-220 YZPST-BT152 ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock...
High ability of current shock resistance BT152-500RT TO-220 SCR
YZPST-BT152-500RT ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main purposes
Alternating...
Table glass passivation process 600V BT152-600R TO-220 SCR
BT152-600R/800R YZPST-BT152-600R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main...
20A 800V BT152-800R Single mesa structure SCR
BT152-600R/800R YZPST-BT152-800R ●Product features
Silicon unilateral device NPNP four layer structure,
P+ on the through diffusion isolation,
Single mesa structure (Single Mesa),
Table glass passivation process,
The back (anode) electrode metal: Ti-Ni-Ag
The high ability of current shock resistance
●The main...
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